Semiconductor package with barrier for radio frequency absorber

ABSTRACT

Semiconductor packages and methods of manufacturing semiconductor packages are described herein. In certain embodiments, the semiconductor package includes a housing including a first compartment and a second compartment, the first and second compartments being divided from one another. The semiconductor package can also include an integrated device die disposed in the first compartment, and a radio frequency (RF) absorber disposed in the second compartment.

INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS

Any and all applications for which a foreign or domestic priority claimis identified in the Application Data Sheet as filed with the presentapplication are hereby incorporated by reference under 37 CFR 1.57.

BACKGROUND Field

The present disclosure relates generally to a semiconductor package witha barrier for a radio frequency (RF) absorber and manufacturing methodstherefor.

Description of the Related Art

Various types of semiconductor packages may include very high frequencyRF integrated device dies (e.g., transmitter or receiver front ends)that may cause interference with or otherwise disturb electroniccomponents outside the package. Package lids may be used to contain theRF emissions emitted from within a package, such as, for example, fromwithin packages having high frequency device dies (e.g., E-band or otherhigh frequency devices). While such lids can advantageously shieldsurrounding circuit components from electromagnetic interference, thelids may also cause unpredictable and electrically disruptive cavityresonances inside the package, which can disturb the circuit componentstherein. To resolve these potential problems, RF absorbers may bedisposed inside the package to dampen and/or absorb the RF waves emittedby the device dies in the package. However, the materials which formportions of some RF absorbers may release gases such as hydrogen andsulfur (among other gases) in sealed environments. Such outgassing candamage active components in various types of integrated device dies. Toprotect the device dies from the outgassing, a gettering material may bedisposed inside the cavity of the package.

However, gettering materials are expensive, and their hydrogen removalefficiency can decrease over time. As a result, the production of highfrequency devices in large quantities can become prohibitively expensivewith the incorporation of gettering materials. Moreover, as the hydrogenremoval efficiency of the gettering material decreases, the hydrogenoutgassed from RF absorbers may eventually contaminate the dielectricmaterials inside the cavity and degrade the circuit components therein.Accordingly, there is a continuing need for a low cost package housingthat effectively shields external components from RF emissions from thepackage and that that also prevents contamination due to outgassing fromthe RF absorber.

SUMMARY OF SOME EMBODIMENTS

The systems, methods, and devices described herein each have severalaspects, no single one of which is solely responsible for its desirableattributes. Without limiting the scope of this invention as expressed bythe claims which follow, some features are described briefly below.After considering this description, and particularly after reading thesection entitled “Detailed Description of Some Embodiments,” one willunderstand the advantageous features of the systems, methods, anddevices described herein.

In some aspects, a semiconductor package with a radio frequency (RF)absorber is disclosed. The semiconductor package can include a housingcomprising a first compartment and a second compartment, the first andsecond compartments being divided from one another, an integrated devicedie disposed in the first compartment, and a radio frequency (RF)absorber disposed in the second compartment.

In some aspects, a lid assembly for a semiconductor package isdisclosed. The lid assembly can include a lid and a radio frequency (RF)absorber. The lid can include a cover and a partition. The cover and thepartition can cooperate to define a compartment between the cover andthe partition and the RF absorber can be disposed in the compartment.

In some aspects, a semiconductor package with a lid having a compartmentis disclosed. The semiconductor package can include a substrate, aframe, an integrated device die mounted to the substrate, and a lidmounted to at least one of the frame and substrate over the integrateddevice die. The lid, frame, and substrate can at least partly define acavity in which the integrated device die is disposed. The lid caninclude a compartment formed therein and the compartment can beseparated from the cavity by a partition.

Details of one or more embodiments of the subject matter described inthis application are set forth in the accompanying drawings and thedescription below. Any of the features, components, or details of any ofthe arrangements or embodiments disclosed in this application arecombinable and modifiable to form myriad new arrangements andembodiments that fall within the spirit and scope of this disclosure.Other features, aspects, and advantages will also become apparent fromthe description, the drawings, and the claims. Note that the relativedimensions of the following figures may not be drawn to scale.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will now be described with reference to the followingdrawings, which are provided by way of example, and not limitation. Likereference numerals indicate identical or functionally similar elements.

FIG. 1 is a schematic side sectional view of a semiconductor packagewith two separate cavities, in accordance with some embodiments.

FIG. 2 is an exploded side sectional view of a semiconductor package,according to some embodiments.

FIG. 3A is a schematic side cross-sectional view of a semiconductorpackage having a shaped lid, according to another embodiment.

FIG. 3B is a schematic side cross-sectional view of a semiconductorpackage with a flat lid, according to another embodiment.

FIGS. 4A-4D are side cross-sectional views of four different integrateddevice packages, according to various embodiments.

FIG. 5 is an exploded perspective view of a semiconductor package,according to another embodiment.

FIG. 6A is a front perspective view of the package shown in FIG. 5.

FIG. 6B is a bottom perspective view of the package shown in FIG. 5,with the substrate omitted for ease of illustration.

FIG. 7A is a top plan view of the package of FIGS. 5-6B with a portionof the cover shown transparent for purposes of illustration.

FIG. 7B is a side cross-sectional view of the package of FIG. 7A

FIG. 8 is a simplified process flow for manufacturing a semiconductorpackage, according to various embodiments.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

Embodiments of the present disclosure provide lids for semiconductorpackages. Lids for semiconductor packages are provided which definecavities for RF absorbers that are separate from the cavities whichhouse integrated device dies, and methods of manufacturing the same areprovided. While certain embodiments are described below, theseembodiments are presented by way of example only, and can be embodied inmyriad different ways as defined and covered by the claims.

In various embodiments disclosed herein, a semiconductor package cancomprise a housing having a first compartment and a second compartmentsealed from the first compartment. An integrated device die (such as ahigh frequency die) can be disposed in the first compartment, and an RFabsorber can be disposed in the second compartment. As explained above,some types of integrated device dies (such as high frequency devicedies) emit RF waves which may interfere with components outside thepackage. In various embodiments, the housing can comprise a metallicportion (e.g., a metallic lid) which acts to contain the RF waves withinthe package and to shield external components from the RF waves.Providing the metallic portion or lid may also introduce resonanceswithin the package cavity which can negatively affect the performance ofvarious components in the package. The RF absorber can advantageouslydampen and/or absorb the RF waves emitted by the integrated device die.In the disclosed embodiments, the RF absorber can be separated from theintegrated device die such that any outgassing from the RF absorber doesnot contaminate or degrade the integrated device die. In somearrangements, a ventilation hole is provided to provide fluidcommunication between the second compartment with the RF absorber andthe outside environs to allow any gases from the RF absorber to escapethe package without harming the die. Gettering materials, such aspalladium, can advantageously be omitted from the packaging materials.

FIG. 1 is a schematic side sectional view of a semiconductor package 10with two separate cavities (also referred to as compartments), accordingto various embodiments. As shown in FIG. 1, the semiconductor package 10defines a housing 20 including a first cavity 22 and a second cavity 24.An integrated device die 26 can be disposed inside the first cavity 22.An RF absorber 34 can be disposed inside the second cavity 24. In someembodiments, additional features may be disposed in the first and/orsecond cavities 22, 24. For example, in some embodiments, two or moreintegrated device dies can be disposed in the first cavity 22. Inaddition, in some embodiments, multiple components may cooperate to formthe first cavity 22, and multiple components may cooperate to form thesecond cavity 24. For example, as shown and described in more detailbelow with reference to FIGS. 2A and 2B, as well as other figures, invarious embodiments, a lid and a substrate can cooperate to form thefirst cavity 22. In some embodiments, one or more portions of the lidcan cooperate to form the second cavity 24, such that the second cavity24 is defined within the lid. As also shown and described below inconnection with FIGS. 4D-7B, in various embodiments, the first cavity 22can be additionally compartmentalized into two or more sub-cavities, forexample, for supporting and housing a plurality of integrated devicedies and/or passive electronic components.

In FIG. 1, the portions of the housing 20 can contain radio-frequencywaves emitted from the integrated device die 26 so that they do notdisturb system components outside of the semiconductor package 10. Forexample, portions of the housing 20 which define the first and secondcavities 22, 24 can comprise metal, or metal-coated surfaces, which canshield external components from the RF waves. However, as explainedabove, the housing 20 may create electromagnetic resonance conditionswithin the package 10, which can interfere with the operation ofcomponents in the package 10. Advantageously, the RF absorber 34disposed in the second cavity 24 can dampen cavity resonances caused bysuch containment by absorbing RF waves emitted from the integrateddevice die 26. The RF absorber 34 can comprise any suitable type ofabsorber. For example, in some embodiments, the RF absorber 34 cancomprise a ferromagnetic material, for example, comprising nickel,and/or iron.

The integrated device die 26 can be any suitable die for any suitableapplication. For example, in some embodiments, the integrated device die26 can be designed and packaged for high frequency applications, suchas, for example, wave guide launch platforms, high speed fiber opticapplications, high frequency military applications, communicationsinfrastructure (e.g., point-to-point communication in the E-frequencyband), cellphone backbones, radars, and the like. In some embodiments,the integrated device die 26 can comprise a gallium arsenide (GaAs) die,a gallium nitride (GaN) die, or any suitable type of Group III-Vsemiconductor die, among others. Such material sets may be particularlysensitive to hydrogen outgassing from the RF absorber 34. The die 26 cancomprise any suitable type of high frequency dies, such as transceivers,receivers, power amplifier modules. Further, it should be appreciatedthat the first and second cavities 22, 24 can house any number ofsuitable integrated device dies or other electronic components ordevices.

In FIG. 1, the first and second cavities 22, 24 are sealed from oneanother by a partition 36 such that the features in the first cavity 22are isolated from the features in the second cavity 24. The partition 36can therefore prevent fluids (e.g., gases) from passing from the secondcavity 24 to the first cavity 22, and vice versa. For example, incertain embodiments, the first and second cavities 22, 24 are sealed atleast partly by the partition 36 such that the integrated device die 26in the first cavity 22 is isolated from the RF absorber 34 in the secondcavity 24, as well as from any gas (e.g., hydrogen gas) that the RFabsorber 34 releases (also referred to as outgassing). In someembodiments, the RF absorber 34 is adhered to an inside surface of thesecond cavity 24, such as, for example, a top surface of the partition36. Advantageously, the partition 36 inhibits or prevents outgassedhydrogen (or other gases) in the second cavity 24 from permeating intothe first cavity 22 and contaminating the dielectric materials inside,which consequently inhibits or prevents the integrated device die 26 andother active components inside the first cavity 22 from degrading due tohydrogen exposure (also referred to as hydrogen poisoning). In someembodiments, the second cavity 24 and partition 36 cooperate toeffectively quarantine outgassed hydrogen or other gases from thefeatures inside first cavity 22. As a result, in certain embodiments, nogettering material (e.g., palladium or any other gettering material)need be disposed in either the first or second cavity 22, 24. Thepartition 36 preferably passes RF waves and accordingly is preferablynon-metal, such as ceramic or plastic. For example, the partition 36 canbe a molded liquid crystal polymer (LCP).

Thus, the semiconductor package 10 in FIG. 1 addresses a major problemcurrently associated with RF absorbers in semiconductor packages:hydrogen outgassing and the concomitant use of expensive getteringmaterial. For example, as shown in FIG. 1, the first and second cavities22, 24 can be sealed from one another such that the RF absorber 34 isoutside the first cavity 22 where outgassing does not affect the activecircuit components in the first cavity 22. The package 10 mayadvantageously be relatively low-profile and lightweight, whileeffectively shielding external components from electromagnetic radiationgenerated within the package 10. In addition, in certain embodiments, noactive circuit components are disposed in the second cavity 24. In suchembodiments, the RF absorber 34 can be disposed in the second cavity 24without the use of expensive gettering material, such as, for example,palladium, which is also difficult to adhere to the housing 20. As willbe described in more detail below, the second cavity 24 can isolate theRF absorber 34 from the die(s) within the first cavity 22. For example,in some embodiments, the second cavity 24 can be arranged to quarantinethe outgassed hydrogen of the RF absorber 34, and/or in someembodiments, the second cavity 24 can be arranged to allow the outgassedhydrogen from the RF absorber 34 to diffuse out of the second cavity 24to the outside environs.

In certain embodiments, the material of the RF absorber 34 can be aferromagnetic material, for example, comprising nickel, and/or iron aswell as any other suitable RF absorber material, and in certainembodiments, the material of the partition 36 can be plastic, such asliquid crystal polymer (LCP), as well as any other suitable non-metal,and/or composite material that allows radio-frequency waves to passthrough. For example, in certain embodiments, the partition 36 can be ametal coated plastic.

Further, although FIG. 1 illustrates a semiconductor package 10 thatincludes two separate cavities 22, 24, it should be appreciated that anysuitable number of separate cavities can be defined by the housing 20.For example, in certain embodiments, the housing 20 can define two tosix cavities, or more, such as, for example, 2, 3, 4, 5, 6, or morecavities. One or more of these cavities can house an RF absorber or anintegrated device die and can be sealed from any number of the othercavities by one or more partitions such that that hydrogen outgassedinto any cavity including an RF absorber is quarantined therein and/orallowed to diffuse outside the semiconductor package 10, but not to thecavity housing the device(s) 26, as will be described in more detailbelow. In addition, it should be appreciated that any of the one or morecavities can be compartmentalized into two or more sub-cavities, each ofwhich can likewise house an RF absorber or integrated device die. Forexample, in some embodiments, the first cavity 22 can becompartmentalized into two or more sub-cavities, and in someembodiments, the second cavity 22 can be compartmentalized into two ormore sub-cavities. In such embodiments, the two or more sub-cavities canbe sealed from one another and/or from one or more of the othercavities. Of course, it should be appreciated that any suitable numberof RF absorbers and integrated device dies can be disposed in thecavities and/or sub-cavities formed within the semiconductor package 10.However, it should also be appreciated that one or more of the cavitiesand/or sub-cavities may include components other than an integrateddevice die or an integrated RF absorber.

As also shown in FIG. 1, in some embodiments, the second cavity 24 caninclude one or more ventilation holes 28 to facilitate hydrogendiffusion out of the second cavity 24 to the outside environs. Forexample, FIG. 1 illustrates a ventilation hole 28 through the housing 20at or near the top of the second cavity 24. Of course, it should beappreciated that the one or more ventilation holes 28 can be formed atany suitable position around the perimeter of the second cavity 24, suchas, for example, on the sides of the second cavity 24. In someembodiments, the one or more ventilation holes 28 define an openinghaving an area in the range of 0.1 mm² to 3 mm², such as about 0.3 mm²to 2.5 mm², or any other suitable area. It should be appreciated thatthe one or more ventilation holes 28 can be any suitable size and anysuitable shape, such as, for example, square and/or circular ventilationholes with any of the aforementioned areas, among others.

Thus, in some embodiments, such as that illustrated in FIG. 1, thepackage 10 can include one or more ventilation holes 28 to help vent theoutgassed fluids from the package 10. However, the one or moreventilation holes 28 can be useful in other applications as well, suchas, for example, medical imaging (e.g., for X-ray shielding), spaceapplications where gamma rays can damage or otherwise interfere withequipment, among others. Further, in some embodiments, the RF absorber34 can instead comprise a different type of absorber, such as, forexample, an acoustic absorber for use in ultrasound applications todampen noise that could otherwise degrade the ultrasound signal.

As further illustrated in FIG. 1, in some embodiments, the first cavity22 is partly defined by a substrate 40 to which the integrated devicedie 26 is mounted. The substrate 40 can comprise any suitable type ofsubstrate, including, e.g., a printed circuit board (PCB) substrate, amolded leadframe substrate, a ceramic substrate, etc. Bond wires (notshown) can provide an electrical connection between the integrateddevice die 26 and the substrate 40 in various embodiments. In otherembodiments, a flip-chip connection, through silicon vias and solderbumps, or other electrical interconnection methods may be used in lieuof bond wires to electrically connect the integrated device die 26 tothe substrate 40. In some embodiments, the integrated device die 26 canbe mounted onto a die attach pad (not shown). In some embodiments, thesemiconductor package shown in FIG. 1 can take on different arrangementswithout departing from the spirit and scope of this disclosure. Forexample, in certain embodiments, the semiconductor package 10 can takethe form of a pre-molded lead frame, having cavities defined therein,including cavities similar to the first and second cavities 22, 24. Thecavities of the pre-molded lead frame, or of any other suitablesemiconductor packaging arrangement, can likewise be arranged to isolatean RF absorber in a cavity separate from the cavities in which theintegrated device dies are disposed.

FIG. 2 is an exploded side sectional view of a semiconductor package 10,according to some embodiments. Unless otherwise noted, referencenumerals in FIG. 2 refer to components that are the same or generallysimilar to those illustrated above in FIG. 1. As shown in FIG. 2, thesemiconductor package 10 includes multiple features intended to becombined together to define a cavity for an RF absorber and a separatecavity for an integrated device die. For example, in the illustratedembodiment, the semiconductor package 10 includes a lid 30, a frame 38,an integrated device die 26, and a substrate 40. The lid 30 can be flator shaped to define a concavity. The lid 30 can be a composite lid andinclude a cover 32, a partition 36, and an RF absorber 34 disposedwithin the lid 30 between the cover 32 and the partition 36. Further,the lid 30 and the substrate 40 can cooperate to define the first cavity22. The cover 32 and the partition 36 can cooperate to define the secondcavity 24. Similar to FIG. 1, the integrated device die 26 can bedisposed in the first cavity 22, and the RF absorber 34 can be disposedin the second cavity 24. In addition, in some embodiments, the lid 30can include more or less than three components. For example, in someembodiments, the cover 32 and the partition 36 can be manufactured as asingle component that likewise defines a second cavity 24.

The cover 32 can include one or more ventilation holes 28 as describedabove with reference to FIG. 1. Advantageously, the ventilation hole(s)28 can enable outgassing to escape the package 10 without contaminatingthe die 26. Further, in some embodiments, the cover 32 can include arecess 33 sized and shaped to receive at least a portion of the RFabsorber 34 and at least a portion of the partition 36. As shown in FIG.2, the partition 36 can define a recess 35 sized and shaped to receiveat least a portion of the RF absorber 34. The concavities of therecesses 33, 35 can be oriented opposite one another and can cooperateto enclose the RF absorber 34 within the second cavity 24.

Although a frame 38 is illustrated in FIG. 2, it should be appreciatedthat other embodiments may not include such a frame. In the illustratedembodiment of FIG. 2, the first cavity 22 can be partly defined by thesubstrate 40, the partition 36, and/or the frame 38 once the lid 30 isattached to the substrate 40. For example, the first cavity 22 can bepartly defined by the substrate 40, one or more internal walls of theframe 38, and the partition 36 once the lid 30 is attached to thesubstrate 40 and/or the frame 38. In some embodiments, the frame 38partly defines the first cavity 22 or two or more sub-cavities (alsoreferred to as compartments). For example, the frame 38 in FIG. 2 partlydefines the first cavity 22 but does not separate it into two or moresub-cavities. As shown in FIG. 2, the frame 28 can include a recess 37sized and shaped to receive a portion of the partition 36. The partition36 can form the top (also referred to as the ceiling) of the firstcavity 22 and/or its sub-cavities. In addition, the frame 38 can form anelectrical connection to the substrate 40 and can be mounted directly orindirectly thereto. For example, in some embodiments, the lid 30 can beelectrically grounded by way of the frame 38. It should be appreciatedthat the frame 38 can be any suitable material, such as, for example,metal or a composite material. For example, in certain embodiments, theframe 30 can comprise plated copper. The copper can be plated with, forexample, nickel, tin, nickel-gold, and the like, although any suitablemetal can be used (e.g., stainless steel). It should also be appreciatedthat the frame 38 can include one or more internal walls that are fixedand/or adjustable such that the sizes and shapes of the sub-cavities canbe adjusted for different integrated device die applications.Advantageously, the one or more internal walls can prevent adjacentsub-cavities from electrically coupling. Further, in certainembodiments, it should be appreciated that the frame 38 can form astandalone feature or be integrally formed with either the substrate 40and/or any feature(s) of the lid 30.

In FIG. 2, the RF absorber 34 and the partition 36 function as describedabove with reference to FIG. 1. For example, as with the embodiment ofFIG. 1, the cover 32 can act as an RF shield while also providingseparation between the RF absorber 34 and the die 26 so as to preventoutgassing from the absorber 34 from reaching the die 26. In certainembodiments, the cover 32 can comprise a metal to enable RF shieldingand to block exit of RF waves not individually absorbed by the absorber34. For example, in some embodiments, the cover 32 can comprise copper,a copper alloy, a metal alloy or any other suitable material capable ofaccomplishing these functions. The lid 30 may protect the die 26 fromexternal forces and from dust and other foreign objects. The lid 30 canalso provide a surface for handling and product marking.

FIG. 3A is a schematic side cross-sectional view of a semiconductorpackage 10 having a shaped lid 30, according to another embodiment.Unless otherwise noted, reference numerals in FIG. 3A refer tocomponents that are the same or generally similar to those illustratedabove in FIGS. 1 and 2. In FIG. 3A, the semiconductor package 10includes a shaped lid 30. For example, the lid 30 shown in FIG. 3A isshaped to define a concavity, e.g., such that both the first and secondcavities 22, 24 are formed at least in part by the concavity of the lid30. Thus, in FIG. 3A, the first cavity 22 in which the die 26 isdisposed is defined at least in part by the substrate 40, the cover 32,and the partition 36.

FIG. 3B is a schematic side cross-sectional view of a semiconductorpackage 10 with a flat lid 30, according to another embodiment. Unlessotherwise noted, reference numerals in FIG. 3B refer components that arethe same or generally similar to those illustrated above in FIGS. 1 and2. Unlike the lid 30 of FIG. 3A, however, the lid 30 shown in FIG. 3B isflat such that the second cavity 24 is formed within the lid 30 and thefirst cavity 22 is defined by a bottom surface of the lid 30 and arecess of the substrate 40. Further, in both FIGS. 3A and 3B, the cover32 includes one or more ventilation holes 28 to facilitate hydrogendiffusion out of the second cavity 24. As with the embodiments of FIGS.1-2, the lids 30 of FIGS. 3A-3B can act as RF shields to contain RFwaves within the package 10 while also isolating the die 26 fromoutgases emitted from the RF absorber 34. The partition 36 can allow RFwaves to pass to the absorber 34.

FIGS. 4A-4D are side cross-sectional views of four different integrateddevice packages 10, according to various embodiments. Unless otherwisenoted, reference numerals in FIGS. 4A-4D refer to components that arethe same or generally similar to those illustrated above in FIGS. 1-3B.The packages 10 of FIGS. 4A-4D include frames 38 that have differentshapes. In FIGS. 4A-4D, the respective frames 38 are mounted to thesubstrate 40 in different ways. As described above, the frame 38 canpartly define the first cavity 22, or can partly define two or moresub-cavities. For example, while the frames 38 in FIGS. 4A-4C eachdefine a single first cavity 22, the frame 38 in FIG. 4D defines twosub-cavities 22′, 22″ with two integrated device die 26′, 26″ disposedinside. However, it should be appreciated that the frame 38 can defineany suitable number of sub-cavities.

In addition, FIGS. 4A-4D illustrate four different ways in which the lid32 can be attached to the substrate 40 and integrated within thesemiconductor package 10. With reference to FIG. 4A, the cover 32 can beattached to a top surface of the frame 38, and the frame 38 can beattached to a top surface of the substrate 40. In FIG. 4A, the firstcavity 22 can be defined by the top surface of the substrate 40,internal walls of the frame 38, and a bottom surface of the partition 36(which can be part of the cover 32). By contrast, in FIG. 4B, the cover32 can be attached to an inset surface and a top surface of the frame38, and the frame 38 can be attached to a top surface of the substrate40. In FIG. 4C, the cover 32 can be attached to the top surface of thesubstrate 40, in addition to inset and top surfaces of the frame 38, andthe frame can be attached to the top surface of the substrate 40. Withreference to FIG. 4D, the cover 32 can be attached to the top surface ofthe substrate 40, and the frame 38 can be attached to the top surface ofthe substrate 40. Of course, any suitable lid 32 attachment to thesemiconductor package 10 may be provided. FIGS. 4A-4D also illustrateone or more ventilation holes 28 in the cover 32. As discussed above,the ventilation hole(s) 28 are sized and shaped to facilitate hydrogendiffusion out of the second cavity 24 to the outside environs.

FIG. 5 is an exploded perspective view of a semiconductor package 10,according to some embodiments. FIG. 6A is a front perspective view ofthe package 10 shown in FIG. 5. FIG. 6B is a bottom perspective view ofthe package 10 shown in FIG. 5, with the substrate 40 omitted for easeof illustration. FIG. 7A is a top plan view of the package 10 of FIGS.5-6B with the cover shown transparent for purposes of illustration. FIG.7B is a side cross-sectional view of the package of FIG. 7A through thecross section 7B-7B shown in FIG. 6A. Unless otherwise noted, referencenumerals in FIGS. 5-7B refer to components that are the same orgenerally similar to those illustrated above in FIGS. 1-4D. For example,the lid 30 can be mounted to the substrate 40, which can be any suitabletype of substrate, such as a PCB or leadframe. The lid 30 can include apartition 36 and a cover 32 which cooperate to define the second cavity24, in which the RF absorber 34 can be disposed. For example, thepartition 36 can comprise a recess formed in a top surface thereof toreceive the RF absorber 34. The cover 32 of the lid 30 in FIGS. 5-7B caninclude one or more ventilation holes 28 to facilitate hydrogendiffusion out of the second cavity 24 (not shown), in which the RFabsorber 34 is disposed. Of course, it should be appreciated that theone or more ventilation holes 28 can be formed at any suitable positionon the cover 32, such as, for example, at a corner of the cover 32 asshown in FIG. 5, at the center of the cover 32, and/or on one or moresides of the cover 32. In some embodiments, the one or more ventilationholes 28 define an opening having an area in the range of 0.1 mm² to 3mm², such as about 0.3 mm² to 2.5 mm², or any other suitable area. Itshould be appreciated that the one or more ventilation holes 28 can beany suitable size and any suitable shape, such as, for example, squareand/or circular ventilation holes with any of the aforementioned areas,among others. In addition, as shown in FIGS. 5 and 7B, the partition 36can comprise one or more protrusions 65 extending from a bottom surfaceof the partition 36. The protrusions 65 can be sized and shaped to fitwithin a portion of the cavity 22. In some embodiments, the protrusions65 can help align and/or secure the partition 36 to the frame 38. Incertain embodiments, the features depicted in FIGS. 5-7B can be designedfor an integrated wave guide launch system.

In the embodiment of FIGS. 5-7B, the cover 32 can be mounted to theframe 38 such that the partition 36 and the RF absorber 34 are disposedbetween the cover 32 and the frame 38. For example, side walls of thecover 32 can be disposed around the partition 36 and can contact anupper surface of the frame 38. As shown in FIGS. 5, 6B, and 7A-7B, theframe 38 defines three sub-cavities 22′, 22″, 22′″. In some embodiments,the three sub-cavities 22′, 22″, 22′″ act as metal-back shorts (alsoreferred to as wave guide cavities) and can accommodate very highfrequency RF devices, such as, for example, E-Band transmitter andreceiver front ends. Although not illustrated in FIGS. 5-7B, threeintegrated device dies 26′, 26″, 26′″ can be disposed in the threecorresponding sub-cavities 22′, 22″, 22′″. However, it should beappreciated that any suitable number of integrated device dies can bedisposed in sub-cavities 22′, 22″, 22′″. Further, it should beappreciated that some of the sub-cavities 22′, 22″, 22′″ may not includean integrated device die. As described above, it should be appreciatedthat such dies can be any suitable die for any suitable application.Further, as shown in FIGS. 5 and 6B-7B, the sizes and shapes of thesub-cavities defined by the frame 38 can be different from one another,but in other embodiments, the sizes and/or shapes of the sub-cavitiescan be the same.

The cover 32 and the frame 38 can cooperate to form an RF shield for thepackage 10, as explained above in connection with FIG. 1. In variousembodiments, the cover 32 and the frame 38 comprise a metal. Forexample, the cover 32 can comprise stainless steel in some embodiments,however, other metals may be suitable. As described above, the frame 38can comprise plated copper in some embodiments. The partition 36 can beany material which can prevent outgassing from passing from the RF 34absorber in the second cavity 24 to the integrated device die 26 in anyof the first cavities 22. For example, the partition 36 can comprise apolymer, such as liquid crystal polymer (LCP). The frame 38 can bemounted and electrically connected to the substrate 40 by way of, e.g.,a conductive adhesive. The frame 38 can be grounded to form an RFshield.

In addition, any of the embodiments described herein, any variations ofthe embodiments described herein, and/or any combinations of thefeatures described herein can be manufactured with any suitablemanufacturing method or process embodiment. For example, FIG. 8 is aflowchart illustrating process 50 for manufacturing the semiconductorpackages 10 shown in FIGS. 1-7B, according to some embodiments. Invarious embodiments, the process 50 can include any number of thefollowing steps, including more or fewer of the following steps, and inany suitable order.

Process 50 is illustrated in FIG. 8 and includes a block 52 providing asubstrate. As described above, in certain embodiments, the substrate cancomprise any suitable type of substrate, such as a leadframe, a flexiblesubstrate or PCB. The substrate can comprise a generally planarsubstrate, or the substrate can include a recess sized to receive anintegrated device die. The process 50 continues in a block 54 withmounting an integrated device die to the substrate. The integrateddevice die can comprise any suitable type of die, such as a highfrequency die. The die can be mounted to the top surface of thesubstrate or in a recess of the substrate. The die can be electricallyconnected to the substrate in any suitable manner, e.g., by way of wirebonds or a flip chip connection. In a block 56, the process continueswith mounting a lid to the substrate over the integrated device die,thereby forming a first cavity over the mounted integrated device die.The lid can include a component (such as an RF absorber) disposed in acompartment of the lid separate from the cavity. Of course, any suitablemanufacturing process with any number of steps in a similar ordissimilar order may be possible.

Any system, method, and device described in this application can includeany combination of the preceding features described in this and otherparagraphs, among other features and combinations described herein,including features and combinations described in subsequent paragraphs.

Although this invention has been disclosed in the context of certainembodiments and examples, it will be understood by those skilled in theart that the present invention extends beyond the specifically disclosedembodiments to other alternative embodiments and/or uses of theinvention and obvious modifications and equivalents thereof. Inaddition, while several variations of the invention have been shown anddescribed in detail, other modifications, which are within the scope ofthis invention, will be readily apparent to those of skill in the artbased upon this disclosure. It is also contemplated that variouscombinations or sub-combinations of the specific features and aspects ofthe embodiments may be made and still fall within the scope of theinvention. It should be understood that various features and aspects ofthe disclosed embodiments can be combined with, or substituted for, oneanother in order to form varying modes of the disclosed invention. Thus,it is intended that the scope of the present invention herein disclosedshould not be limited by the particular disclosed embodiments describedabove, but should be determined only by a fair reading of the claimsthat follow. Moreover, language such as “up to,” “at least,” “greaterthan,” “less than,” “between,” and the like includes the number recited.Numbers preceded by a term such as “approximately”, “about”, and“substantially” as used herein include the recited numbers (e.g., about10%=10%), and also represent an amount close to the stated amount thatstill performs a desired function or achieves a desired result. Forexample, the terms “approximately”, “about”, and “substantially” mayrefer to an amount that is within less than 10% of, within less than 5%of, within less than 1% of, within less than 0.1% of, and within lessthan 0.01% of the stated amount.

What is claimed is:
 1. A semiconductor package comprising: a substrate;a frame; an integrated device die mounted to the substrate; and a lidmounted to at least one of the frame and substrate over the integrateddevice die, wherein the lid, frame, and substrate at least partly definea cavity in which the integrated device die is disposed, the lidcomprising a compartment formed therein, the compartment separated fromthe cavity by a partition.
 2. The semiconductor package of claim 1,further comprising a radio frequency (RF) absorber disposed in thecompartment.
 3. The semiconductor package of claim 1, wherein the cavityand the compartment are divided from each other by the partition.
 4. Thesemiconductor package of claim 1, wherein the partition comprisesplastic.
 5. A lid assembly for a semiconductor package, the lid assemblycomprising: a lid comprising a cover and a partition; and a radiofrequency (RF) absorber wherein the cover and the partition cooperate todefine a compartment between the cover and the partition, the RFabsorber being disposed in the compartment.
 6. The lid assembly of claim5, wherein the cover is shaped to form a concavity, at least a portionof the partition disposed in the concavity.
 7. The lid assembly of claim5, wherein the cover comprises a ventilation hole therethrough.
 8. Asemiconductor package comprising the lid assembly of claim 5, thesemiconductor package further comprising: a substrate; a frame disposedbetween the lid and the substrate, wherein the lid, frame, and substratecooperate to define a cavity, wherein the lid is mounted to at least oneof the substrate and frame; and an integrated device die disposed in thecavity, wherein the integrated device die is mounted to the substrate,wherein no gettering material is disposed in the compartment or cavity.9. The semiconductor package of claim 8, wherein the partition dividesthe compartment and cavity from one another.